Gunn Diode in Screw Package
The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
Hot electron injected Gunn diodes offer the following advantages over conventional Gunn Diodes:
A conventional Gunn diode generally consists of three layers; a relatively low doped transit region sandwiched between two highly doped contact regions. Performance of Gunn diodes is improved by injecting high energy, ‘hot electrons’, into the transit region. These devices, designed and manufactured by Teledyne Lincoln Microwave, are referred to as Hot electron injected or Graded-gap Gunn Diodes.
For Gunn Diode users an important parameter to consider is package style. Teledyne Lincoln Microwave Gunn diodes are designed for use is various package styles covering the frequency range 4 to 110 GHz and suited to a variety of applications. Custom packaging requirements will also be considered upon request. The following package limitations need to be taken into consideration:
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