A conventional Gunn diode generally consists of three layers; a relatively low doped transit region sandwiched between two highly doped contact regions. Performance of Gunn diodes is improved
by injecting high energy, ‘hot electrons’, into the transit region. These devices, designed and manufactured by Teledyne Lincoln Microwave, are referred to as Hot electron injected or Graded-gap Gunn Diodes.
For Gunn Diode users an important parameter to consider is package style. Teledyne Lincoln Microwave Gunn diodes are designed for use is various package styles covering the frequency range 4 to 110 GHz and suited to a variety of applications. Custom packaging requirements will also be considered upon request. The following package limitations need to be taken into consideration:
- Thermal Resistance: The lowest thermal resistance is offered by screw-based packages. For high volume, lower power applications where time to assemble an oscillator is more important, non-threaded packages may be preferred.
- Frequency Range: The magnitude of the parasitic impedances attributed to the package element reduces with the package size. Consequently, the larger, more robust package styles are normally specified for operation at lower frequencies and the smaller, low parasitic impedance packages are recommended for higher frequency applications.
- Magnetically Tuned Circuits: For applications involving magnetically (YIG) tuned oscillators, Teledyne Lincoln Microwave Gunn diodes can be supplied in Kovar-free packages.