​​High Power Amplifiers

​Solid State Power Amplifier (SSPA) technology continues to offer opportunities to displace Travelling Wave Tube Amplifiers (TWTA) from radar, communication and Electronic Warfare (EW) applications.

Teledyne has continuous active developments of new power amplifiers and higher level integration of multifunctional assemblies across a variety of markets, including space and defence. Recently completed designs cover the spectrum from L-Band through to V-Band.​

Teledyne Lincoln Microwave amplifiers use a range of semiconductor materials including LDMOS, Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Gallium Nitride (GaN), of which, GaN offers the highest power density with these wide bandgap semiconductors generally offering higher output powers.

High Power Amplifiers at a Glance

  • Our power amplifiers are usually used to drive a TWT or magnetron but may be used directly as the main RF source.
  • Key parameters are output power, efficiency and power gain.
  • Example performance parameters:
    • Single amplifier​ outputs are +33dBm to +55dBm (2W to 300W) with the capability
      to combine using an external coupler for higher power requirements.
    • Gains of +15 to +30dB
    • CW and pulsed options
    • GaN and GaAs technology
    • Operating Temperature -50'C to +85'C
  • Input voltages from +24V to +50V and +/-5V.(Priority switching fitted as standard)
  • All units have power supply regulation with reverse and over voltage protection.​
  • ITAR Free

 Common Specifications

Frequency
(GHz)
Saturated output power - Psat
(dBm)
Small Signal Gain 
(dB)
Power Gain
(dB)
Power added
Efficiency @ Psat 
(%)
1 - 2  50.00 40.00 35.00 30.00
2 - 6 53.00 48.00 43.00 30.00

If you haven’t found exactly what you are looking for click here to contact Teledyne Lincoln Microwave about a solution which meets your exact requirement.

 Additional Information

Rack mounted High Power Amplifier

​'Chip and Wire' production facilities available at Teledyne Lincoln Microwave allow use of bare semiconductor die as well as packaged transistors. Use of bare die provides options in design for thermal management and efficiency.

  • Critical design aspects include efficiency, thermal management of the semiconductor die and the power supply control.

  • Improving efficiency, which is frequently the toughest requirement that our power amplifiers must meet, not only reduces the required primary power, it also reduces the heat dissipation requirement of the host platform. Typically, our L Band SSPAs are designed for Power Added Efficiencies (PAE) in the region of 25%.

  • Using 'design for thermal management' techniques we focus on reducing the thermal resistance between the transistor die and its heat sink. Specific techniques include the use of diamond heat spreaders and other thermally efficient die mounting techniques.

  • GaN HEMT devices can be volatile if switching of power is not adequately managed. Teledyne's power switching techniques protect the transistors from dangerous power conditions. The same circuits ensure fast rise times and minimize droop across RF pulses.

An often overlooked aspect of amplifier design is integration with other system elements, particularly at higher output powers. Efficient transfer of power from the final gain stage into the high power transmission line requires expertise developed over decades of designing high power RF and Microwave solutions.

Teledyne Lincoln Microwave has experience designing systems operating from microWatts to10s of kilo​​Watts, including launching into waveguide, transitions and power combining networks, as well as the essential high power test capability.​

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